Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers

摘要

Structures of Si(001) hydrophilically bonded wafers have been studied by transmission electron microscopy. A model of three-fold nod generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.