Tailoring the Electrical Properties of Undoped GaP

摘要

The charge compensation in undoped GaP single crystals is investigated by modeling the Fermi level position for various concentrations of shallow and deep donors and acceptors. The model is based on the numerical solution of the charge neutrality equation and allows for calculating the Fermi energy in the temperature range of 1 - 1000 K. The experimental studies of the electronic properties and concentrations of grown-in defect centers are performed by the high-resolution photoinduced transient spectroscopy (HRPITS). We show that at the shallow acceptor concentration below 1x1015 cm~(-3) and the concentration of deep-level defects ～3×10~(15) cm~(-3) obtaining undoped GaP with the semi-insulating (SI) properties is possible by substantial reducing the residual concentration of shallow donor impurities.