Hydrogen decoration of vacancy related complexes in hydrogen implanted silicon

摘要

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at E_v+0.27 eV and E_c-0.32 eV have been observed (E_v and E_c denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125°C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at E_c - 0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.