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机译:氢气植入对4H-SIC硅空位排放的影响
Department of Physics/Centre for Materials Science and Nanotechnology University of Oslo N-0316 Oslo Norway;
Department of Physics/Centre for Materials Science and Nanotechnology University of Oslo N-0316 Oslo Norway;
Department of Physics and I3N University of Aveiro Campus Santiago 3810-193 Aveiro Portugal;
Department of Physics/Centre for Materials Science and Nanotechnology University of Oslo N-0316 Oslo Norway;
机译:通过近表面离子注入消除4H-SiC外延层中的碳空位:离子种类的影响
机译:H〜+离子注入硅并退火后形成的氢分子和硅空洞的板状沉淀物的自由吉布斯能的测定
机译:氢注入硅中空位相关配合物的氢修饰
机译:氢注入硅中空位相关配合物的氢修饰
机译:6氢碳化硅和4氢碳化硅中本征和离子注入引起的缺陷的电学和光学表征。
机译:3D印刷硅胶弯月面植入物:3D打印过程对硅胶植入物性质的影响
机译:由飞秒激光器制造的4H-SiC硅空位色中心的共聚焦光致发光表征