Single crystal silicon substrate for production of silicon-on-insulator substrates and semiconductor and display devices has a dense hydrogen implantation region providing a separation zone for production of thin silicon film

摘要

A single-crystal silicon substrate (10a) comprises: a oxide film, a gate pattern and an interface with impurity ions implanted into its surface, the surface being planarized after forming the oxide film, gate pattern and the interface; and a dense hydrogen ion implantation location (15) at which hydrogen ions are implanted at a predetermined concentration and depth. Independent claims are given for: (a) a single-crystal substrate (10a, 10b) comprising an impurity ion implantation/diffusion region, in which a PNP junction structure or an NPN structure having implanted impurity ions is located near to the surface of a single-crystal silicon substrate, and an oxide film formed on the impurity ion implantation/diffusion region; (b) silicon-on-insulator (SOI) substrates; (c) a semiconductor device comprising a thin non-single-crystal silicon film device (e.g., a metal-oxide-semiconductor (MOS) thin film transistor) and a thin single-crystal silicon film (e.g., a metal-insulator-semiconductor (MIS) thin film transistor) located in different regions of an insulating substrate; (d) a display device including a SOI substrate comprising a thin single-crystal silicon film on an insulating substrate, and a thin single crystal film on which the semiconductor device is formed; and (e) processes for forming a semiconductor device.