METHOD OF REFORMING SURFACE OF SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD OF FORMING SINGLE CRYSTAL SILICON CARBIDE THIN FILM, ION IMPLANTATION AND ANNEALING METHOD, AND SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND SINGLE CRYSTAL SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a surface reforming method by thermal etching which enables to planarize not only the carbon surface but also the silicon surface of a single crystal SiC substrate, and which has a low impact on the environment.;SOLUTION: A storage container 16 is made of a tantalum metal with the whole surface coated with a tantalum carbide layer. An upper and a lower container of the storage container 16 are engaged with each other in such a manner that part of the tantalum carbide layer which covers the inner surface of the upper and the lower container of the storage container 16 may be exposed to the interior space of the storage container 16. The single crystal SiC substrate 15 is stored in such a storage container 16. Meanwhile, a heating chamber is controlled to a temperature not lower than 1,500°C nor higher than 2,300°C under reduced pressure in advance. By moving the storage container 16 into the heating container, the single crystal SiC substrate 15 is heat-treated at a temperature not lower than 1,500°C nor higher than 2,300°C, while the interior of the storage container 16 is kept at a vacuum of the saturated vapor pressure of silicon to thermally etch to planarize the surface of the single crystal SiC substrate 15 to a molecular level.;COPYRIGHT: (C)2008,JPO&INPIT