Accumulation of VO Defects in n-Si at High-temperature Pulse Electron Irradiation: Generation and Annealing Kinetics Dependence on Irradiation Intensity

摘要

Accumulation kinetics of vacancy-oxygen (VO) complexes in Czochralski (Cz) n-Si at 360°C and 1 MeV electron pulse irradiation has been investigated. It is shown that during the irradiation and simultaneous generation and annealing of VO centers, the accumulation kinetics has non-linear dependence with saturation. It is found that there is a maximal concentration of VO centers, which depends on the radiation intensity (J) and temperature as well. It is also established the annealing of VO centers can substantially be stimulated by the intensity of electron irradiation. An increase of J from 1.25×10~(15) to 1.25×10~(16)electrons/(cm~2s) does not influence the generation efficiency of VO, though it accelerates their annealing by more than one order of magnitude.