Transmission electron microscopy investigations of metal-impurity-related defects in crystalline silicon

摘要

This contribution summarizes recent efforts to apply transmission electron microscopy (TEM) techniques to recombination-active extended defects present in a low density. In order to locate individual defects, electron beam induced current (EBIC) is applied in situ in a focused ion beam (FIB) machine combined with a scanning electron microscope. Using this approach defect densities down to about 10cm~(-2) are accessible while a target accuracy of better than 50nm is achieved. First applications described here include metal impurity related defects in multicrystalline silicon, recombination and charge collection at NiSi_2 platelets, internal gettering of copper by NiSi_2 precipitates and site-determination of copper atoms in NiSi_2.