Defects in Ion Implanted Silicon, Investigated by Transmission Electron Microscopy

摘要

A classification scheme for the different forms of implant-related damage which arise upon annealing consisting of five categories is presented. The sources of the different types of damage along with their morphologies are discussed in detail. Pre- and post-amorphization studies indicate that implantation of a preamorphized surface can result in a significant increase in the concentration of the category II (end of range) damage. The annealing kinetics is dependent on the implant species and dose. Direct comparison of similar weight ions indicated quite different annealing kinetics with comparable initial damage distributions. An enhanced dissolution of the category II defects was observed for certain species. (ERA citation 12:031161)