RESURF技术中LDMOS外延层单位面积杂质密度研究

摘要

LDMOS器件设计中，常采用RESURF技术来提高器件的性能。文中主要研究具有RESURF技术结构的LD-MOS器件，围绕当获得最优的器件结构时，其外延层单位面积杂质密度Ntot不是定值这一现象展开研究，给出了一种关于外延层单位面积杂质密度Ntot的近似解析表达式。经过大量的模拟仿真及数据分析，发现在最优器件结构中均匀掺杂的外延层单位面积杂质密度Ntot与衬底掺杂浓度存在有规律的函数关系。最终，通过综合分析影响器件的关键因素，得到了最优器件的外延层单位面积杂质密度Ntot与衬底掺杂浓度的关系函数。%When design the LDMOS device, RESURF technology often used to improve the performance of the device.In this article, Study LDMOS device with RESURF technology. Arounded that the epitaxial layer impurity density of unit area is not a constant value for the optimal RESURF LDMOS to do study, given an approximate analytical expressions about epitaxial layer impurity density of unit area.Through a series of simulation and analyzed ,Study found that the uniformly doped epitaxial layer impurity density of unit area and Substrate had a regularity function .Last comprehensive analysis the key factors of influencing the LDMOS device, summarized the RESURF coefficient, and concluded a function between uniformly doped epitaxial layer impurity density of unit area and the concentration of the substrate.