Correlation between static and dynamic SOA (energy capability) of RESURF LDMOS devices in smart power technologies

摘要

In this paper, we demonstrate the correlation between small area device static SOA and large area device pulsed SOA for single and double RESURF LDMOS configurations. We also elucidate the thermal and electrical limitations to the dynamic SOA of large area devices through measurements and transient electrothermal simulations and demonstrate a significant improvement in the large area dynamic SOA for a previously reported double RESURF technique which realizes an excellent R_dson-BV_dss trade-off. An analytical model is described which is capable of predicting energy capability of these devices for different device size and geometry.