Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling

摘要

This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for the implementation of 600-V LDMOSFETs using junction isolation and dielectric isolation reduced surface electric field technologies for high-temperature operations up to 300 °C. Simulations are carried out for two Si/SiC transistorsuddesigned with either PN or silicon-on-insulator (SOI) and their equivalent structures employing bulk-Si or SOI substrates. Through comparisons, it is shown that the Si/SiC devices have the potential to operate with an offstate leakage current as low as the SOI device. However, the low-side resistance of the SOI LDMOSFET is smaller inudvalue and less sensitive to temperature, outperforming both Si/SiC devices. Conversely, under high-side configurations, the Si/SiC transistors have resistances lower than that of the SOI at high substrate bias, and invariable with substrate potential up to −200 V, which behaves similar to the bulkSi LDMOS at 300 K. Furthermore, the thermal advantage of the Si/SiC over other structures is demonstrated by using a rectangle power pulse setup in udTechnologyComputer-Aided design simulations.