METHOD FOR MANUFACTURING AN LDMOS TRANSISTOR CAPABLE OF PREVENTING AN LDMOS CHANNEL REGION FROM BEING INFLUENCED BY THE DENSITY OF IMPURITIES

摘要

PURPOSE: A method for manufacturing an LDMOS transistor is provided to obtain a stably threshold voltage by preventing the asymmetry of a threshold voltage due to a gradient of a photo resist. ;CONSTITUTION: A photo resist pattern is formed on a semiconductor substrate. An incline etch section(130,132) is formed on the lower side of the photo resist pattern by etching the open semiconductor substrate between the photo resist patterns. A channel(140) is formed by implanting impurity in the semiconductor substrate using the photo resist pattern. A body region(150) is formed by vertically implanting impurities in the lower side of the semiconductor substrate with a channel.;COPYRIGHT KIPO 2011