TRIPLE RESURF LDMOS器件的优化设计

摘要

提出了一种新型TRIPLE RESURF结构的LDMOS器件,与普通的TRIPLE RESURF结构不同的是埋层采用了分区注入,即在靠近源端一侧采用较高注入剂量,在靠近漏端一侧则采用较低的注入剂量.因而会降低漏端表面电场峰值,提高了击穿电压.利用SILVACO TCAD软件分析了各个参数对击穿电压和比导通电阻的影响,与普通的TRIPLE RESURF结构相比,在比导通电阻不变时,击穿电压则提高了15 V.%A new TRIPLE RESURF LDMOS was proposed,compared with conventional TRIPLE RESURF LDMOS,the difference was that the P_buried layer was divided into two regions,the region that is closed to the source has a large dose of ion implantation ,while the region that is closed to the drain has a small dose of ion implantation.Thus the peak surface electricfield near the drain region was depressed,and the breakdown voltage was increased.Effects of parameters on breakdown voltage and specific on-resistance were analyzed by using device simulator and technology simulator Silvaco TCAD. Compared with conventional TRIPLE RESURF device structure ,the specific on-resistance was almost the same ,but the breakdown voltage was increased by 15 V.