Fundamental Quantum 1/F Noise in Ultrasmall Semiconductor Devices and Their Optimal Design Principles.

摘要

To learn to control 1/f noise in electronic devices, the author's Quantum 1/f Noise theory was further developed and applied to pn junctions, junction and MIS infrared detectors, bipolar transistors, FET, BJT, vacuum tubes, secondary emission tubes, SQUIDs, and other devices. The present report gives a review of the progress made in the theory of the Quantum 1/f Effect, including the general derivation of the effect in second quantization, the derivation of quantum 1/f cross-correlations, the effect of a finite mean free path in condensed matter, the characteristic functional, piezoelectric coherent quantum 1/f noise, and an interpolation formula for coherent and conventional quantum 1/f noise. The practical applications presented here are limited here to infrared detectors and SQUIDs, the rest are referenced. Optimal low-noise design principles based on the 1/f theory are formulated. (rrh)