机译:具有可变高k电介质沟槽的700V三重Resurf LDMO的分析研究
Xidian Univ Int Res Ctr Intelligent Percept & Computat Minist Educ Key Lab Intelligent Percept & Image Understanding Xian 710071 Peoples R China|Xidian Univ Sch Artificial Intelligence Joint Int Res Lab Intelligent Percept & Computat Xian 710071 Peoples R China;
Xidian Univ Int Res Ctr Intelligent Percept & Computat Minist Educ Key Lab Intelligent Percept & Image Understanding Xian 710071 Peoples R China|Xidian Univ Sch Artificial Intelligence Joint Int Res Lab Intelligent Percept & Computat Xian 710071 Peoples R China;
Xidian Univ Int Res Ctr Intelligent Percept & Computat Minist Educ Key Lab Intelligent Percept & Image Understanding Xian 710071 Peoples R China|Xidian Univ Sch Artificial Intelligence Joint Int Res Lab Intelligent Percept & Computat Xian 710071 Peoples R China;
Breakdown voltage (BV); dielectric REduced SURface field (RESURF); high-K (HK); lateral double-diffused MOSFETs (LDMOS);
机译:Triple-Resurf LDMOS与挖沟门的过程和性能优化
机译:具有平面和沟槽栅极集成的低导通电阻三重RESURF SOI LDMOS
机译:具有改进的击穿电压和特定ON-的介电沟槽LDMOS的可变-
机译:具有P阱层的新型700V深沟槽隔离式双RESURF LDMOS
机译:高k栅极电介质的反应:在ha,锆,钇和镧基电介质以及二氧化ha原子层沉积的原位红外结果方面的研究。
机译:具有集成三维方向的新型LDMO高k门和现场电介质