基于RESURF理论的SOI LDMOS 耐压模型研究

摘要

对SOI LDMOS器件的击穿电压进行了研究,建立了适用于该器件的RESURF耐压模型,获得了表面电势和电场分布解析表达式,给出了SOI LDMOS器件漂移区的最优浓度,在此基础上将该模型嵌入半导体工艺模拟以及器件模拟软件(Sentaurus TCAD)中,并对SOI LDMOS器件的表面电场分布、击穿特性和I-V特性进行了仿真,得到的仿真结果验证了模型可以精确的表征SOI LDMOS器件的耐压.%We study the breakdown characteristics of SOl LDMOS device and present a withstand model based on RESURF principle for the device. The analytical expressions of surface potential and field distribution and the optimal concentration of drift region are obtained. Based on the research, we embed the model into the Sentaurus TCAD simulation software, and then simulate the surface electric field distribution, the breakdown characteristic and the I-V characteristic of SOI LDMOS device. The simulation results show that the proposed model performs can effectively describe the device.