Hafnium oxide films were deposited on silicon substrates by RF sputtering at room temperature. Post-deposition rapid thermal annealing of the sputtered HfC>2 films was carried out in the temperature range of 400°C to 800°C in oxygen ambient. The structural properties ware studied by X-ray diffraction (XRD), where the enhancement in the crystallinity of HfO2 (111) orientation was observed. The Capacitance —Voltage (C-V) and Current density —Voltage (J-V) characteristics of the annealed dielectric film were investigated employing Al/HfO2/Si Metal Oxide Semiconductor (MOS) capacitor structure. The flatband voltage (V/b) and oxide charge density (Q_(ox)) were extracted from the high frequency (1 MHz) C-V curve. Leakage current was found to be minimum for the annealing temperature of 600°C.
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