Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films

摘要

Ti-doped In2O3 (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 degrees C for 30 min to investigate the effects of the annealing temperature on the films' structural, electrical and optical properties. The films annealed at 200 degrees C and above were polycrystalline in phase, and their electrical resistivity decreased to as low as 7.5x10(-4) Omega cm at the annealing temperature of 300 degrees C. The films' optical transmittance in the visible wavelength region also improved from 77.7% to 81.2% when the annealing temperature was increased. The TIO films' figures of merit were evaluated, showing that the TIO films annealed at 300 degrees C had better optical and electrical performance than the other films prepared using lower-temperature or no annealing.