Effect Of Indium Doping On Structural, Optical And Electrical Properties Of Zinc Oxide Thin Films

摘要

Konduktif oksida lutsinar (TCO) seperti filem nipis zink oksida (ZnO)uddidopkan logam mempunyai aplikasi penting dalam peranti optoelektronik. Filemudnipis ZnO didopkan logam mempunyai kelebihan kerana mereka boleh difabrikasikanuddalam proses yang agak mudah dan menjimatkan. Walau bagaimanapun, ciri-ciriudtersebut adalah sensitif kepada jumlah logam pendopan di dalam hos bahan zinkudoksida. Dalam kajian ini, kesan kandungan indium (In) dan juga suhuudpenyepuhlindapan pada sifat-sifat struktur, optik dan elektrik ZnO disiasat. Melaluiudpercikan magnet frekuensi radio (RF) dari target ZnO / In2O3 tersinter denganudkandungan In berbeza di antara 1-7 wt. %, filem nipis indium zink oksida (IZO) telahudberjaya ditumbuhkan ke atas substrat Si (100) dan substrat kaca yang telah dibersihkanudsecara ultrasonik. Filem nipis IZO telah ditumbuhkan dalam persekitaran argon padaudsuhu 150ºC dengan kuasa 100W. Selain daripada unsur-unsur zink (Zn) dan oksigenud(O), spektrum tenaga serakan sinar-X (EDX) juga mengesan unsur In daripada filemudnipis IZO, menunjukkan bahawa In telah berjaya diserapkan ke dalam hos bahanud(ZnO). Mikroskop imbasan elektron (SEM) menunjukkan bahawa filem-filem nipisudIZO mempunyai morfologi permukaan yang berterusan tanpa kehadiran zarah-zarahudasing. Filem nipis ZnO tanpa dop juga difabrikasikan melalui kondisi percikan yangudsama untuk perbandingan. Analisis pembelauan sinar-X (XRD) menunjukkan bahawaudfilem nipis mempunyai kecenderungan orientasi di sepanjang satah (002).ududTransparent conducting oxide (TCO) such as metal-doped zinc oxide (ZnO)udthin films have important applications in optoelectronic devices. Metal-doped ZnOudthin films have an advantage as they can be fabricated in a relatively simple andudeconomical process. However, their properties are sensitive to the amount of metaluddoping in the zinc oxide host material. In this work, the effect of indium (In) contentudas well as the annealing temperature on the structural, optical and electrical propertiesudof ZnO were investigated. The Indium-doped ZnO (IZO) thin films were successfullyuddeposited onto ultrasonically cleaned Si (100) and glass substrates by radio frequencyud(RF) magnetron sputtering from sintered ZnO/In2O3 target with different In contentudranging from 1 to 7 wt. %. The IZO thin films were grown in argon environment atud150ºC with a bias power of 100W. Apart from zinc (Zn) and oxygen (O) elements, theudenergy dispersive x-ray (EDX) spectra of the IZO thin films also detected In element,udindicating that In were successfully incorporated into the host material (ZnO). Theudscanning electron microscopy (SEM) shows that the IZO thin films have a continuousudsurface morphology without the presence of foreign particles. Un-doped ZnO filmsudwere also fabricated under the same sputtering conditions for comparison. The X-rayuddiffraction (XRD) analysis show that the thin films have preferential orientation alongud(002) plane.ud