Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH₃ nitridation and post-deposition rapid thermal annealing

摘要

A method of making a semiconductor device having a silicon dioxide based gate with improved dielectric properties including providing a silicon based substrate having active areas defined therein. Thermally growing a silicon dioxide based gate from the silicon based substrate. Nitriding the silicon dioxide based gate to provide a nitrided silicon dioxide based gate and to increase the dielectric constant of the silicon dioxide based gate without substantially increasing thickness of the silicon dioxide based gate.