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Robust Shallow Trench Isolation Technique Used for 75nm NOR Flash Memory

机译:鲁棒浅沟槽隔离技术用于75nm,也不闪存

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We have developed a new Self-aligned poly (SAP) process to improve the: tunnel oxide integrity by optimizing the shallow trench isolation (STI) corner rounding profile and reducing the local oxide thinning effect. It is found that double in-situ steam generation (ISSG) liner oxides can effectively improve the STI corner rounding. As for -the local oxide thinning effect, the composite pad dielectrics (C-Pad) composed of SiO_2/poly-Si are good to prevent local thinning of tunnel oxide at STI corner. Moreover, using ISSG tunnel oxide can further reduce the local oxide thinning effect. Excellent breakdown characteristics of tunnel oxide by optimizing the key technologies have been verified in this work.
机译:我们开发了一种新的自对准聚(SAP)过程来改善:通过优化浅沟槽隔离(STI)拐角圆形轮廓并降低局部氧化物稀疏效果来改进:隧道氧化物完整性。发现双原位蒸汽发生(ISSG)衬里氧化物可以有效地改善STI角舍入。至于局部氧化物稀疏效果,由SiO_2 / Poly-Si组成的复合垫电介质(C焊盘)是良好的,以防止在STI角处的隧道氧化物的局部变薄。此外,使用ISSG隧道氧化物可以进一步降低局部氧化物稀疏效果。在这项工作中已经验证了通过优化关键技术的隧道氧化物的优异击穿特性。

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