Relaxation of localized charge in trapping-based nonvolatile memory devices

机译：在捕获的非易失性存储器件中放松本地化充电

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Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster than electron relaxation. The degradation of data retention in cycled NROM cells is interpreted in

机译：研究了NROM器件上的捕获孔和捕获的电子中捕获孔的放松动态。孔松弛是八个数量级，比电子松弛快。解释了循环的NROM细胞中数据保留的降解

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《IEEE International Reliability Physics Symposium》|2008年||共7页
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Janai M.; Shappir A.; Bloom I.; Eitan B.;
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中图分类 O4-53;
关键词
electron traps; hole traps; read-only storage; NROM device; ONO layer; disordered nitride glass; dispersive transport; localized charge relaxation; trapping-based nonvolatile memory device; NROM; NVM; ONO; Silt; infgt; 3lt; /infgt; Nlt; infgt; 4lt; /infgt; amorphous semiconductors; data re;

机译：电子陷阱;孔陷阱;只读存储;NROM装置;ONO层;氮化物玻璃混乱;分散运输;局部充电放松;基于俘获的非易失性存储器件;NROM;NVM;ono;SI＆lt;＆lt;inf＆gt;3＆lt;n＆lt;inf＆gt;4＆lt;/ inf＆gt;非晶半导体;数据重新;

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1. Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices [J] . Etienne Nowak, Elisa Vianello, Luca Perniola, Japanese journal of applied physics . 2010,第4issue2期

机译：氮化的只读存储非易失性存储设备中在编程和保留期间的电荷本地化
2. Threshold Voltage Fluctuations in Localized Charge-Trapping Nonvolatile Memory Devices [J] . Janai M., Lee M. C. Electron Devices, IEEE Transactions on . 2012,第3期

机译：局部电荷陷阱非易失性存储设备中的阈值电压波动
3. Investigation of Channel Hot Electron Injection by Localized Charge-Trapping Nonvolatile Memory Devices [J] . Eli Lusky, Yosi Shacham-Diamand, Gill Mitenberg, IEEE Transactions on Electron Devices . 2004,第3期

机译：局部电荷陷阱非易失性存储器件的沟道热电子注入研究
4. Relaxation of localized charge in trapping-based nonvolatile memory devices [C] . Janai M., Shappir A., Bloom I., IEEE International Reliability Physics Symposium . 2008

机译：在捕获的非易失性存储器件中放松本地化充电
5. Uniform and localized charge-trapping in SONOS nonvolatile memory devices. [D] . Wang, Yu. 2005

机译：SONOS非易失性存储设备中的均匀和局部电荷陷阱。
6. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism [O] . Ye Zhou, Su-Ting Han, Prashant Sonar, -1

机译：受控双极性电荷陷阱机制的非易失性多级数据存储存储设备
7. Lanthanum Fluoride Charge Trapping Layer with Silicon Nanocrystals for Nonvolatile Memory Device Application [O] . Sheikh Rashel Al Ahmed 2014

机译：具有硅纳米晶体的镧氟化物电荷俘获层，用于非易失性存储器件应用
8. Nonvolatile and Cryogenic-Compatible Quantum Memory Devices (QuMEM). [R] . Nayfeh, O., Simonsen, K., Rees, D., 2016

机译：非易失性和低温兼容的量子存储器件（QumEm）。

Relaxation of localized charge in trapping-based nonvolatile memory devices

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