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IEEE International Reliability Physics Symposium

召开年：2009
召开地：Montreal(CA)
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1.Prediction of Logic Product Failure Due To Thin-Gate Oxide Breakdown

机译：薄栅氧化型氧化术引起的逻辑产品故障预测
- 作者：Yung-Huei Lee;Neal Mielke;Marty Agostinelli;Sukirti Gupta;Ryan Lu;William McMahon
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
2.IDENTIFICATION AND LAYOUT MODIFICATION OF COPPER/LOW K INTERCONNECT DIELECTRIC RELIABILITY ASSESSMENT BY USING RVDB TEST

机译：使用RVDB检验识别和布局修改铜/低k互连介电可靠性评估
- 作者：Tom M. Z. Lin;W. M. Pisu;S. R. Lin;Robin C. J. Wang;C. C. Chiu;Kenneth Wu
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
3.AMBIENT USE-CONDITION MODELS FOR RELIABILITY ASSESSMENT

机译：可靠性评估的环境使用条件模型
- 作者：Chen Gu;Robert F. Kwasnick;Neal R. Mielke;Eric M. Monroe;C. Glenn Shirley
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
4.A New Failure Mechanism of MLC NOR Flash Memory Caused by Aggravated Drain Disturb Due to Co-Salicidation Process

机译：由于合并过程，通过加重排水沟引起的MLC和闪存的新故障机制
- 作者：Bong Yong Lee;Jee Hoon Han;Jung In Han;Sang-Pil Sim;Wook Hyun Kwon;Heon Kyu Lee;Yoon Moon Park;Seung Boo Jeon;Kwang Su Kim;Jae Hoon Kim;Wook H. Lee;Chan-Kwang Park;Kinam Kim
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Flash memory;
- Drain disturb;
- Cobalt encroachment;
- Cobalt-salicidation;
- Drain doping level;
5.PRECISE AND SIMPLE METHODS FOR DETECTION OF INITIAL DEFECTS IN 1.2 NM GATE DIELECTRICS BASED ON NONLINEAR CONDUCTIONS

机译：基于非线性磁芯检测1.2nm栅极电介质中初始缺陷的精确和简单方法
- 作者：Hiroyuki Suto;Tomonori Muratomi;Kana Ebihara;Michihiro Kanno;Tetsuo Gocho;Naoki Nagashima
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- SiON;
- Gate dielectrics;
- Defect;
- Power law;
- TDDB;
- TZDB;
- Progressive breakdown;
6.APPROACH TO EXTRAPOLATING RELIABILITY OF CIRCUITS OPERATING IN A VARYING AND LOW TEMPERATURE RANGE

机译：改变和低温范围内运行电路的外推的方法
- 作者：Yuan Chen;Lynett Westergard;Mohammad Mojaradi;Curtis Billman;Scott Cozy;Elizabeth Kolawa
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Circuit reliability;
- Product reliability;
- Low temperature electronics;
- Use condition extrapolation;
7.FLASH MEMORY FIELD FAILURE MECHANISMS

机译：闪存字段故障机制
- 作者：Pekka Muroke
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Flash reliability;
- Field failure;
- NOR flash;
- EFR;
8.Investigation of Hot carrier Degradation in Grooved Channel Structure nMOSFETs: Sphere shaped Recess Cell Array Transistor (SRCAT)

机译：沟槽通道结构中热载流劣化的研究NMOSFET：球形凹槽仪阵列晶体管（SRCAT）
- 作者：J. Y. Seo;K. J. Lee;H. Kim;S. Y. Lee;S. S. Lee;W. S. Lee;Y. J. Kim;S. J. Hwang;C. K. Yoon
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
9.ANALYSIS OF THE BACK-GATE EFFECT ON THE ON-STATE BREAKDOWN VOLTAGE OF SMARTPOWER SOI DEVICES

机译：SmartPower SOI器件上的后栅极效应分析
- 作者：Stefan Schwantes;Josef Furthaler;Bernd Schauwecker;Franz Dietz;Michael Graf;Volker Dudek
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
10.EFFECTS OF HOT CARRIER STRESS ON RELIABILITY OF STRAINED-SI MOSFETS

机译：热载波应力对应变-SI MOSFET的可靠性的影响
- 作者：S. Dey;M. Agostinelli;C. Prasad;X. Wang;L. Shifren
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Uniaxial strained Si MOSFET;
- Hot-electron degradation;
- CMOS IC;
11.BV{sub}(CER) - INCREASED OPERATING VOLTAGE FOR SIGE HBTS

机译：BV {Sub}（CER） - 增加SiGe HBT的工作电压
- 作者：Jochen Kraft;Bernhard Loffler;Nikolaus Ribic;Ewald Wachmann
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Hetero bipolar transistor;
- HBT;
- SiGe;
- Breakdown voltage;
- BV{sub}(CEO);
- BV{sub}(CBO);
- BV{sub}(CER);
- Safe operating area;
- Avalanche multiplication;
- Impact ionisation;
12.Reliability Qualification of CoSi2 Electrical Fuse for 90Nm Technology

机译：90nm技术Cosi2电气保险丝的可靠性资格
- 作者：C. Tian;B. Park;C. Kothandaraman;J. Safran;D. Kim;N. Robson;SS. Iyer
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
13.ON THE RECOVERY OF SIMULATED PLASMA PROCESS INDUCED DAMAGE IN HIGH-κ DIELECTRICS

机译：关于仿真等离子体工艺诱导高κ电介质损伤的回收
- 作者：B. J. OSullivan;L. Pantisano;P. Roussel;R. Degraeve;G. Groeseneken;S. DeGendt;M. Heyns
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
14.Characterization of Charge Traps in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) Structures for Embedded Flash Memories

机译：用于嵌入式闪存的金属氧化物 - 氮化物 - 氧化物 - 氧化物 - 氧化物半导体（MonoS）结构的电荷陷阱的表征
- 作者：Takeshi Ishida;Yutaka Okuyama;Renichi Yarnada
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- MONOS;
- SONOS;
- Nitride storage;
- Trap;
- Distribution;
- Avalanche injection;
- Embedded flash memory;
15.TIME-TO-FAIL EXTRACTION MODEL FOR THE 'MIXED-MODE' RELIABILITY OF HIGH-PERFORMANCE SIGE BIPOLAR TRANSISTORS

机译：高性能SiGe双极晶体管“混合模式”可靠性的时间 - 失效提取模型
- 作者：Danielle Panko;T. Vanhoucke;Richard Campos;G. A. M. Hurkx
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Mixed-mode;
- Bipolar transistor;
- Reliability;
- High-performance;
- Avalanche;
- Base current degradation;
16.IDENTIFICATION OF A NOVEL BTS AND RVB FAILURE MECHANISM IN COPPER/ULTRA-LOW K INTEGRATIONS USING A STOPLESS TRENCH ETCH

机译：使用无沟槽蚀刻识别铜/超低k集成中的新型BTS和RVB故障机制
- 作者：Larry Smith;Ward Engbrecht;Yuri Solomentsev;Kyle Neuman;Ricky McGowan;Klaus Pfeifer
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
17.X-ray Inspection-Induced Latent Damage in DRAM

机译：X射线检测引起的DRAM潜在损坏
- 作者：Akram Ditali;Manny Ma;Michael Johnston
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Latent Damage;
- Junction Leakage;
- Refresh degradation Thermal Annealing;
- X-ray radiation;
- X-ray induced damage;
18.DOPANT IMAGING AND PROFILING OF WIDE-BAND-GAP DEVICES BY SECONDARY ELECTRON POTENTIAL CONTRAST

机译：通过二次电子电位对比度掺杂成像和宽带间隙装置的分析
- 作者：M. Buzzo;M. Ciappa;M. Stangoni;W. Fichtner
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
19.SUBSTRATE CURRENT INDEPENDENT HOT CARRIER DEGRADATION IN NLDMOS DEVICES

机译：NLDMOS器件中基板电流独立热载体降解
- 作者：D. Brisbin;P. Lindorfer;P. Chaparala
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- NLDMOS;
- Hot carrier;
- MOS power devices;
- Charge pumping;
20.Lifetime Enhancement under High Frequency NBTI measured on Ring Oscillators

机译：在环形振荡器上测量的高频NBTI下的寿命增强
- 作者：Tanya Nigam;E. B. Harris
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- NBTI;
- Ring Oscillator;
- Relaxation;
21.SURFACE TRANSPORTATION OF CHEMICAL SPECIES IN SPRAY-CLEANING AND GATE OXIDE INTEGRITY

机译：喷雾清洁和栅极完整性化学物质的表面运输
- 作者：Lieyi Sheng;Eddy De Backer;Philippe Verpoort;Johan De Greve
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Spray-cleaning;
- Surface transportation;
- Gate oxide integrity;
- Failure patterns;
22.Transient currents in HfO2 and their impact on circuit and memory applications

机译：HFO2中的瞬态电流及其对电路和存储器应用的影响
- 作者：C. Monzio Compagnoni;A. S. Spinelli;A. Bianchini;A. L. Lacaita;S. Spiga;M. Fanciulli
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- dielectric devices;
- hafnium compounds;
- integrated circuit reliability;
- semiconductor storage;
- silicon compounds;
- transients;
- HfOlt;
- subgt;
- 2lt;
- /subgt;
- -SiOlt;
- subgt;
- 2lt;
- /subgt;
- bilayer property;
- dielectric material;
- gate stack composition;
- memory application;
- precision circuit reliab;
23.NBTI: AN ATOMIC-SCALE DEFECT PERSPECTIVE

机译：NBTI：原子造型缺陷视角
- 作者：J. P. Campbell;P. M. Lenahan;A. T. Krishnan;S. Krishnan
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Negative bias temperature instability;
- Interface traps;
- MOSFET;
- Spin-dependent recombination;
24.HOT CARRIER-INDUCED DEGRADATION ON HIGH-K TRNASISTORS AND LOW NOISE AMPLIFIER

机译：高k个特隆敏电阻和低噪声放大器的热载流子引起的降解
- 作者：CHUANZHAO YU;J. S. YUAN
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Hafnium dioxide;
- High-k;
- Dielectric;
- Noise figure;
- Radio frequency;
- Circuit reliability;
- S-parameters;
25.INVESTIGATION OF EXTERNAL LATCHUP ROBUSTNESS OF DUAL AND TRIPLE WELL DESIGNS IN 65NM BULK CMOS TECHNOLOGY

机译：65NM批量CMOS技术对外闩锁稳健性的研究
- 作者：Dimitris Kontos;Krzysztof Domanski;Robert Gauthier;Kiran Chatty;Mujahid Muhammad;Christopher Seguin;Ralph Halbach;Christian Russ;David Alvarez
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
26.Recovery Effects in the Distributed Cycling of Flash Memories

机译：闪存分布式循环中的恢复效果
- 作者：Neal Mielke;Hanmant P. Belgal;Albert Fazio;Qingru Meng;Nick Righos
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
27.DEGRADATION MECHANISM IN LOW-TEMPERATURE P-CHANNEL POLYCRYSTALLINE SILICON TFTs UNDER DYNAMIC STRESS

机译：动态应力下低温P沟道多晶硅TFT中的降解机理
- 作者：Y. Toyota;M. Matsumura;M. Hatano;T. Shiba;M. Ohkura
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
28.PHYSICAL MODELING OF NEGATIVE BIAS TEMPERATURE INSTABILITIES FOR PREDICTIVE EXTRAPOLATION

机译：负偏置温度稳定性的物理建模预测外推
- 作者：V. Huard;C. R. Parthasarathy;C. Guerin;M. Denais
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- NBTI;
- Interface traps;
- Hole trapping;
- Single hole emission;
- Modeling;
29.TEMPERATURE MONITOR: A NEW TOOL TO PROFILE CHARGE DISTRIBUTION IN NROM MEMORY DEVICES

机译：温度监测：在NROM存储器设备中配置电荷分配的新工具
- 作者：Lior Avital;Andrea Padovani;Luca Larcher;Ilan Bloom;Ruzin Arie;Paolo Pavan;Boaz Eitan
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
30.STUDY OF DESIGN FACTORS AFFECTING TURN-ON TIME OF SILICON CONTROLLED RECTIFIERS (SCRS) IN 90 AND 65NM BULK CMOS TECHNOLOGIES

机译：影响90和65NM批量CMOS技术中硅控制整流器（SCR）接线时间的设计因素研究
- 作者：James Di Sarro;Kiran Chatty;Robert Gauthier;Elyse Rosenbaum
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Electrostatic discharge (ESD);
- Silicon Controlled Rectifier (SCR);
- ESD protection circuits;
31.A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics

机译：基于二氧化硅的低k互连电介质的时间依赖性介电击穿测试期间观察到的场加速度参数的统计评估
- 作者：Jinyoung Kim;Ennis T. Ogawa;Joe W. McPherson
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Low-k Dielectric;
- Reliability;
- BEOL;
- TDDB;
- Breakdown;
- Field Acceleration Parameter;
32.BREAKDOWN VOLTAGE PREDICTION OF ULTRA-THIN GATE INSULATOR IN ELECTROSTATIC DISCHARGE (ESD) BASED ON ANODE HOLE INJECTION MODEL

机译：基于阳极孔注射模型的静电放电（ESD）中超薄栅极绝缘子的击穿电压预测
- 作者：A. Kinoshita;Y. Mitani;K. Matsuzawa;H. Kawashima;C. Sutoh;J. Kurihara;T. Hiraoka;I. Hirano;M. Muta;M. Takayanagi;N. Shigyo
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- ESD;
- Breakdown voltage;
- TLP;
- Anode Hole Injection;
33.SUCCESSFUL DEVELOPMENT AND IMPLEMENTATION OF STATISTICAL OUTLIER TECHNIQUES ON 90NM AND 65NM PROCESS DRIVER DEVICES

机译：成功开发和实施90nm和65nm过程驱动设备的统计转级技术
- 作者：Kenneth M. Butler;Suresh Subramaniam;Amit Nahar;John M. Carulli Jr.;Thomas J. Anderson;W. Robert Daasch
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
34.APPLICATION OF ELECTRICAL DIAGNOSIS AND C-AFM TO ISOLATE ON BOARD AC SCAN FAIL

机译：电气诊断和C-AFM在船上扫描失败的应用中的应用
- 作者：L. F. WEN;C. H. CHEN
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
35.SOI Poly-defined Diode for ESD Protection in High Speed I/Os

机译：SOI高速I / O中的ESD保护二极管
- 作者：Victor Chen;Akram Salman;Stephen Beebe;Elyse Rosenbaum;Souvick Mitra;Chris Putnam;Robert Gauthier
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
36.RELIABILITY CHARACTERIZATION OF DIFFERENT PORE SEALING TECHNIQUES ON POROUS SILK DIELECTRIC FILMS

机译：多孔丝介电膜上不同孔隙密封技术的可靠性表征
- 作者：J. Michelon;J. Waeterloos;P. H. L. Bancken;V. H. Nguyen;R. Caluwaerts;G. Beyer;S. Rozeveld;E. Beach;R. J. O. M. Hoofman
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
37.Dynamic Negative Bias Temperature Instability and Comprehensive Modeling in PMOS Body-Tied FinFETs

机译：PMOS身体绑数FINFET的动态负偏置温度不稳定与综合建模
- 作者：Hyunjin Lee;Choong-Ho Lee;Donggun Park;Yang-Kyu Choi
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
38.RESISTANCE DRIFT OF ALUMINUM OXIDE MAGNETIC TUNNEL JUNCTION DEVICES

机译：氧化铝磁隧道结装置的电阻漂移
- 作者：Pon S. Ku;Young Chung
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
39.POROSITY-INDUCED ELECTRIC FIELD ENHANCEMENT AND ITS IMPACT ON CHARGE TRANSPORT IN POROUS INTER-METAL DIELECTRICS

机译：孔隙率诱导的电场增强及其对多孔金属电介质电荷输送的影响
- 作者：Changsoo Hong;Linda Milor
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Porosity;
- Low-k;
- Dielectrics;
- Breakdown;
- Transport;
- Monte Carlo;
- Reliability;
40.VOLTAGE ACCELERATION OF TBD AND ITS CORRELATION TO POST BREAKDOWN CONDUCTIVITY OF N- AND P-CHANNEL MOSFETS

机译：TBD的电压加速及其与P沟道MOSFET的断开电导率的相关性
- 作者：M. Rohner;A. Kerber;M. Kerber
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Oxide reliability;
- Dielectric breakdown;
- Voltage acceleration;
41.Impact of NBTI Induced Statistical Variation to SRAM Cell Stability

机译：NBTI诱导统计变化对SRAM细胞稳定性的影响
- 作者：Giuseppe La Rosa;Wee Loon Ng;Stewart Rauch;Robert Wong;John Sudijono
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
42.IMPROVED BIPOLAR ELECTROMIGRATION MODEL

机译：改进的双极电迁移模型
- 作者：L. Doyen;X. Federspiel;D. Ney
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
43.IMPACT OF NITROGEN ON PBTI CHARACTERISTICS OF HFSION/TIN GATE STACKS

机译：氮气对HFSION / TIN栅极堆栈PBTI特性的影响
- 作者：Siddarth A. Krishnan;Manuel Quevedo-Lopez;Hong-Jyh Li;Paul Kirsch;Rino Choi;Chadwin Young;Jeff J. Peterson
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
44.A COMPARATIVE STUDY ON THE SOFT-ERROR RATE OF FLIP-FLOPS FROM 90-NM PRODUCTION LIBRARIES

机译：从90-NM生产库中触发器软误差率的比较研究
- 作者：Tino Heijmen;Philippe Roche;Gilles Gasiot;Keith R. Forbes
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Soft error rate;
- SER;
- Flip-flops;
- Sequential;
- Radiation;
- Alpha-particles;
- Neutrons;
- Accelerated test;
- 90-nm process;
- Process variations;
45.Anovel High Reliability ILD Stack

机译：一部小型高可靠性旧堆栈
- 作者：John J. Naughton;Mark M. Nelson
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- CVD coatings;
- chemical mechanical polishing;
- densification;
- dielectric materials;
- failure analysis;
- phosphorus;
- reliability;
- silicon;
- 0.35 micron;
- 200 nm;
- CMP;
- ILD stack;
- P;
- SACVD PSG film;
- SACVD film;
- Si;
- densification;
- early life failure testing;
- film stress;
- interlevel;
46.RELIABILITY IN MEMS PACKAGING

机译：MEMS包装的可靠性
- 作者：Tai-Ran Hsu
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
47.In-situ Formation of a Copper Silicide Cap For TDDB and Electromigration Improvement

机译：原位形成用于TDDB和电迁移的硅化铜帽
- 作者：K. Chattopadhyay;B. van Schravendijk;T. W. Mountsier;G. B. Alers;M. Hornbeck;H. J. Wu;R. Shaviv;G. Harm;D. Vitkavage;E. Apen;Y. Yu;R. Havemann
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
48.DIRECT MEASUREMENT OF ELECTROMIGRATION INDUCED STRESS IN INTERCONNECT STRUCTURES

机译：直接测量互连结构中的电迁移诱导应力
- 作者：Christopher J. Wilson;Alton B. Horsfall;Anthony G. ONeill;Nicholas G. Wright;Kai Wang;Steve J. Bull;Jonathan G. Terry;J. Tom M. Stevenson;Anthony. J. Walton
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Back Stress;
- Compressive Stress;
- Electromigration;
- Interconnects;
- MEMS;
- Metallization;
- Reliability;
- Stress;
- Stress Gradient;
- Stress Measurement;
- Stress Sensor;
- Sub-micron;
- Tensile Stress;
- Thin Films;
49.ACCURATE CHARACTERIZATION ON INTRINSIC GATE OXIDE RELIABILITY USING VOLTAGE RAMP TESTS

机译：使用电压斜坡测试对固有栅极氧化物可靠性的精确表征
- 作者：S. C. Fan;J. C. Lin;A. S. Oates
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
50.Fast V{sub}(th) instability in HfO{sub}2 gate dielectric MOSFETs and Its impact on digital circuits

机译：HFO {Sub} 2栅极电介质MOSFET中的快速v {sub}（th）不稳定性及其对数字电路的影响
- 作者：C. Shen;T. Yang;M.-F. Li;G. Samudra;Y.-C. Yeo;C. X. Zhu;S. C. Rustagi;M. B. Yu;D.-L. Kwong
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
51.ESD MM FAILURES RESULTING FROM TRANSIENT REVERSE CURRENTS

机译：瞬态反向电流导致的ESD MM故障
- 作者：J. Whitfield;C. Gill;J. Yang;H. Xu;C. Zhan;B. Baumert;M. Zunino
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
52.EFFECTS OF AL DOPING ON ELECTROMIGRATION PERFORMANCE OF NARROW SINGLE DAMASCENE CU INTERCONNECTS

机译：抗掺杂对窄单镶嵌互连电迁移性能的影响
- 作者：S. Yokogawa;H. Tsuchiya
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
53.TIME-RESOLVED AND STROBOSCOPE EBIC ANALYSES ON DYNAMICALLY BIASED ACTIVE DEVICES

机译：动态偏置有源设备上的时间分辨和散光盘eBic分析
- 作者：A. Pugatschow;T. Geinzer;R. Heiderhoff;F.-J. Niedernostheide;L. J. Balk
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
54.Generalized Models for Optimization of BTI in SiON and High-K Dielectrics

机译：SION和高k电介质中BTI优化的广义模型
- 作者：A. Haggag;S. Kalpat;M. Moosa;N. Liu;M. Kuffler;H.-H. Tseng;T.-Y. Luo;J. Schaeffer;D. Gilmer;S. Samavedam;R. Hegde;B. E. White Jr.;P. J. Tobin
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
55.GAN-ON-SI FAILURE MECHANISMS AND RELIABILITY IMPROVEMENTS

机译：Gan-On-Si失效机制和可靠性改进
- 作者：S. Singhal;J. C. Roberts;P. Rajagopal;T. Li;A. W. Hanson;R. Therrien;J. W. Johnson;I. C. Kizilyalli;K. J. Linthicum
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- AlGaN/GaN HFETs;
- GaN high electron mobility transistors (HEMTs);
- RF power transistors;
- Reliability;
- Failure analysis;
56.EXPLAINING 'VOLTAGE-DRIVEN' BREAKDOWN STATISTICS BY ACCURATELY MODELING LEAKAGE CURRENT INCREASE IN THIN SION AND SIO{sub}2/HIGH-K STACKS

机译：通过精确建模薄SiON和SIO {SUB} 2 / HIGH-K堆叠，通过准确建模漏电流增加来解释“电压驱动”故障统计数据
- 作者：R. Degraeve;Ph. Roussel;M. Cho;B. Kaczer;T. Kauerauf;F. Crupi;G. Groeseneken
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
57.UNDERSTANDING MECHANISM OF FILM ATTACH MATERIAL VOID FORMATION IN ELECTRONIC PACKAGES

机译：了解电子包装中薄膜附着材料空隙的机制
- 作者：Alpha Labiano
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Film Attach Material;
- Void Formation;
- Delamination;
58.Interface-Trap Driven NBTI for Ultrathin (EOT-12A) Plasma and Thermal Nitrided Oxynitrides

机译：用于超薄（EOT-12A）等离子体和热氮化氧的接口 - 捕集器驱动NBTI
- 作者：G. Gupta;S. Mahapatra;L. Leela Madhav;D. Varghese;K. Ahmed;F. Nouri
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
59.Investigation of Charge Loss in Cycled NBit Cells via Field and Temperature Accelerations

机译：通过现场和温度加速研究循环的Nbit细胞中电荷损失的研究
- 作者：W. J. Tsai;N. K. Zons;H. Y. Chen;Lenvis Liu;C. C. Yeh;Sam Chen;W. P. Lu;Tahui Wang;Joseph Ku;Chih-Yuan Lu
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
60.THE INFLUENCE OF A NOVEL CONTACTED POLYSILICON-FILLED DEEP TRENCH (DT) BIASED STRUCTURE AND ITS VOLTAGE BIAS STATE ON CMOS LATCHUP

机译：新型接触多晶硅填充深沟槽（DT）偏置结构及其电压偏置状态对CMOS锁存的影响
- 作者：Steven H. Voldman
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- CMOS Latchup;
- Latch-up;
- Trench;
- Deep Trench;
- Silicon Germanium;
- Silicon Germanium Carbon;
61.A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics

机译：基于Cu互连电介质Cu离子漂移的新型TDDB降解模型
- 作者：N. Suzumura;S. Yamamoto;D. Kodama;K. Makabe;J. Komori;E. Murakami;S. Maegawa;K. Kubota
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
62.Reliability Characterization of BEOL Vertical Natural Capacitor Using Copper and Low-k SiCOH Dielectric for 65nm RF and Mixed-Signal Applications

机译：使用铜和低k SICOH电介质的BEOL垂直天然电容器的可靠性表征65nm RF和混合信号应用
- 作者：F. Chen;F. Ungar;A. H. Fischer;J. Gill;A. Chmmakindi;T. Goebel;M. Shinosky;D. Coolbaugh;V. Ramachandran;Y. K. Siew;E. Kaltalioglu;S. O. Kim;K. Park
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Time-dependent dielectric breakdown;
- Capacitance stability;
- Moisture impact;
- Cu interconnect;
- Reliability;
- Low-k;
- ELD;
- Process integration;
63.Transient currents in HfO{sub}2 and their impact on circuit and memory applications

机译：HFO {Sub} 2中的瞬态电流及其对电路和内存应用的影响
- 作者：C. Monzio Compagnoni;A. S. Spinelli;A. Bianchini;A. L. Lacaita;S. Spiga;M. Fanciulli
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
64.Decoupling of cold carrier effects in hot carrier reliability of HfO{sub}2 gated nMOSFETs

机译：HFO {Sub} 2门控NMOSFET的热载波可靠性的冷载体效应的去耦
- 作者：Hokyung Park;Rino Choi;Seung Chul Song;Man Chang;Chadwin D. Young;Gennadi Bersuker;Byoung Hun Lee;Jack. C. Lee;Hyunsang Hwang
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
65.DETERMINATION OF TIME TO BREAKDOWN OF 0.8-1.2 NM EOT HFSION GATE DIELECTRICS WITH POLY-SI AND METAL GATE ELECTRODES

机译：用多Si和金属栅电极测定0.8-1.2nm eot HFsion栅电介质的崩溃时间
- 作者：Seiji Inumiya;Kazuyoshi Torii;Yasuo Nara
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- HfSiON;
- High-k;
- Dielectric breakdown;
- Carrier separation;
66.STUDY OF CU MIGRATION-INDUCED FAILURE OF INTER-LAYER DIELECTRIC

机译：Cu迁移诱导层间电介质失效的研究
- 作者：Sang-Soo Hwang;Sung-Yup Jung;Jung-Kyu Jung;Young-Chang Joo
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
67.ANALYSIS OF ELECTROMIGRATION VOIDING PHENOMENA IN CU INTERCONNECTS

机译：Cu互连中电迁移空隙现象的分析
- 作者：L. Arnaud;J. F. Guillaumond;N. Claret;C. Cayron;C. Guedj;M. Dupeux;V. Arnal;G. Reimbold;G. Passemard;J. Torres
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Electromigration;
- Interconnects;
- Cu;
- Voiding;
68.FAILURE DEFECTS OBSERVED IN POST-BREAKDOWN HIGH-K/METAL GATE STACK MOSFET

机译：击穿后高K /金属栅极堆叠MOSFET中观察到的失败缺陷
- 作者：R. Ranjan;K. L. Pey;C. H. Tung;D. S. Ang;L. J. Tang;T. Kauerauf;R. Degraeve;G. Groeseneken;S. De Gendt;L. K. Bera
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
69.Infrared Ray Emission (IREM) Based Post-Silicon Power Debug Flows Developed for Chip Power Performance

机译：基于红外线发射（IREM）基于硅功率调试流量，用于芯片功率性能
- 作者：Yuan-Chuan Steven Chen;Daniel Lu;Dan Bockelman;Matthew Ma;Ifar Wan
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
70.OXIDE BREAKDOWN AFTER RF STRESS: EXPERIMENTAL ANALYSIS AND EFFECTS ON POWER AMPLIFIER OPERATION

机译：RF应力后的氧化物分解：实验分析和功率放大器操作的影响
- 作者：L. Larcher;D. Sanzogni;R. Brama;A. Mazzanti;F. Svelto
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Oxide breakdown;
- Oxide reliability;
- RF circuits reliability;
71.HIREL DOUBLE SIDED PACKAGE FOR SI/SIC POWER MODULE

机译：用于SI / SIC电源模块的Hirel双面封装
- 作者：B. Borowy;L. Casey;G. Davis;J. Connell
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
72.CATASTROPHIC DEGRADATION OF ORGANIC OPTICAL THIN FILM COMPONENTS

机译：有机光学薄膜组分的灾难性降解
- 作者：Yves GIGASE
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
73.xAnalog Device and Circuit Performance Degradation Under Substrate Bias Enhanced Hot Carrier Stress

机译：基板偏置下的Xanalog设备和电路性能下降增强了热载波应力
- 作者：K. Narasimhulu;V. Ramgopal Rao
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
74.SWITCHING TIME EXTRACTION OF CMOS GATES USING TIME-RESOLVED EMISSION (TRE)

机译：使用时间分辨发射（TRE）切换CMOS门的时间提取
- 作者：Franco Stellari;Alberto Tosi;Peilin Song
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Picosecond Imaging Circuit Analysis (PICA);
- Emission model;
- Slew rate;
- Switching time;
- Time Resolved Emission (TRE);
- Rise-time;
- Fall-time;
75.HIGH BRIGHTNESS INGAN LEDS DEGRADATION AT HIGH INJECTION CURRENT BIAS

机译：高亮度IngaN LED在高喷射电流偏压下降解
- 作者：S. Levada;M. Meneghini. E. Zanoni;S. Buso;G. Spiazzi;G. Meneghesso
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- LED Reliability;
- GaN;
- High Brightness;
76.IMPROVEMENT OF DATA RETENTION TIME PROPERTY BY REDUCING VACANCY-TYPE DEFECT IN DRAM CELL TRANSISTOR

机译：通过减少DRAM电池晶体管空置型缺陷的数据保留时间特性的改进
- 作者：Kensuke Okonogi;Kiyonori Ohyu;Takahide Umeda;Hideharu Miyake;Shinji Fujieda
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- DRAM data retention time;
- Vacancy-type defect and junction leakage current;
77.THE DYNAMIC CURRENT DISTRIBUTION OF A MULTI-FINGERED GGNMOS UNDER HIGH CURRENT STRESS AND HBM ESD EVENTS

机译：高电流应力下多指GGNMOS的动态电流分布和HBM ESD事件
- 作者：Jian-Hsing Lee;Kuo-Ming Wu;Shao-Chang Huang;Chin-Hsin Tang
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
78.COMPREHENSIVE THICKNESS-DEPENDENT POWER-LAW OF BREAKDOWN IN CMOS GATE OXIDES

机译：CMOS栅极氧化物中综合厚度依赖性击穿的击穿
- 作者：A. Hiraiwa;D. Ishikawa
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
79.ANALYSIS OF NBTI DEGRADATION- AND RECOVERY-BEHAVIOR BASED ON ULTRA FAST V{sub}T -MEASUREMENTS

机译：基于超快速v {Sub} T-MeSurement的NBTI降解和恢复行为分析
- 作者：H. Reisinger;O. Blank;W. Heinrigs;A. Muhlhoff;W. Gustin;C. Schlunder
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
80.OXIDATION OF THE TA DIFFUSION BARRIER AND ITS EFFECT ON THE RELIABILITY OF CU INTERCONNECTS

机译：TA扩散屏障的氧化及其对Cu互连可靠性的影响
- 作者：Won-Chong Baek;J. P. Zhou;J. Im;P. S. Ho;Jeong Gun Lee;Sung Bo Hwang;Kyeong-Keun Choi;Shang Kyun Park;Oh-Jin Jung;Larry Smith;Klaus Pfeifer
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Cu interconnect;
- Ta diffusion barrier oxidation;
- High temperature storage (HTS);
- Via-to-line BTS;
81.SELF-PROTECTING ARRAYS FOR OPEN DRAIN CIRCUITS

机译：开漏电路的自保护阵列
- 作者：V. A. Vashchenko;P. J. Hopper
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
82.Reliability of sub 30NM BT(Body-Tied)-FinFET with HFSlON/Poly Silicon Gate Stack for symmetric V{sub}(th) control

机译：具有HFSLON / POTY硅栅极堆栈的SUB 30nm BT（BONY-TIED）-FINFET的可靠性用于对称v {SUB}（TH）控制
- 作者：Eun Suk Cho;Choong-Ho Lee;Albert Fayrushin;Hong Bae Park;Donggun Park
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- FinFET;
- HfSiON dielectric;
- Threshold voltage control;
- Fermi level pinning;
- Reliability;
83.PROCESS INDUCED INSTABILITY AND RELIABILITY ISSUES IN LOW TEMPERATURE POLY-SI THIN FILM TRANSISTORS

机译：低温多Si薄膜晶体管中的过程诱导不稳定和可靠性问题
- 作者：Chih-Yang Chen;Shen-De Wang;Ming-Shan Shieh;Wei-Cheng Chen;Hsiao-Yi Lin;Kuan-Lin Yeh;Jam-Wen Lee;Tan-Fu Lei
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- LTPS TFTs;
- Antenna area;
- Gate bias stress;
- Hot carrier stress;
84.NEW INSIGHTS INTO RECOVERY CHARACTERISTICS POST NBTI STRESS

机译：NBTI压力后恢复特征的新见解
- 作者：C. R. Parthasarathy;M. Denais;V. Huard;G. Ribes;E. Vincent;A. Bravaix
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
85.INVESTIGATION OF THERMAL NEUTRON INDUCED SOFT ERROR RATES IN COMMERCIAL SRAMS WITH 0.35 μM TO 90 NM TECHNOLOGIES

机译：热中子热中子诱导的商业SRAM诱导软误差率，0.35μm至90 nm技术
- 作者：Marcos Olmos;Remi Gaillard;Andreas Van Overberghe;Jerome Beaucour;ShiJie Wen;Sung Chung
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Soft error;
- Single-event upset (SEU);
- Thermal neutrons;
- Cross-section;
- Boron;
- 10{sup left}B;
86.Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuits

机译：HFO2栅极电介质MOSFET中快速vth不稳定性及其对数字电路的影响
- 作者：C. Shen;T. Yang;M.-F. Li;G. Samudra;Y.-C. Yeo;C. X. Zhu;S. C. Rustagi;M. B. Yu;D.-L. Kwong
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
87.LARGE-SCALE TIME CHARACTERIZATION AND ANALYSIS OF PBTI IN HFO{sub}2/METAL GATE STACKS

机译：HFO {Sub} 2 /金属栅极堆栈中PBTI的大规模时间特征及分析
- 作者：J. Mitard;X. Garros;LP. Nguyen;C. Leroux;G. Ghibaudo;F. Martin;G. Reimbold
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
88.A NOVEL HIGH RELIABILITY ILD STACK

机译：一种新型高可靠性ILD堆栈
- 作者：John J. Naughton;Mark M. Nelson
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
89.STUDY ON THE RETENTION TIME OF BODY TIED FINFET DRAM WITH <100> CHANNEL DIRECTIONAL WAFER

机译：用<100>通道定向晶片的主体绑定FINFET DRAM的保留时间研究
- 作者：Chul Lee;Keunnam Kim;Eun Suk Cho;Sanggi Ko;Chang Kyu Kim;Hyun Ho Park;Dongchan Kim;Choong-Ho Lee;Donggun Park
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- FinFET;
- Retention time;
- Wafer orientation;
- GIDL;
90.MINIMUM VOID SIZE AND 3-PARAMETER LOGNORMAL DISTRIBUTION FOR EM FAILURES IN CU INTERCONNECTS

机译：Cu互连中EM故障的最小空隙大小和3参数Lognormal分布
- 作者：Baozhen Li;Cathryn Christiansen;Jason Gill
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Electromigration;
- Cu interconnects;
- Voids;
- Reliability;
- Lognonnal;
- Redundancy;
91.Electrical Breakdown Response for Multiple-Gap MEMS Structures

机译：多个间隙MEMS结构的电击响应
- 作者：Fabian W. Strong;Jack L. Skinner;A. Alec Talin;Paul M. Dentinger;Norman C. Tien
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Electrical Breakdown;
- MEMS Microswitch;
- Paschen Curve;
92.SRAM OPERATIONAL VOLTAGE SHIFTS IN THE PRESENCE OF GATE OXIDE DEFECTS IN 90 NM SOI

机译：SRAM操作电压在90 nm SOI中存在栅极氧化物缺陷的存在
- 作者：VINOD RAMADURAI;NORMAN ROHRER;CHRISTOPHER GONZALEZ
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
93.DC AND AC NBTI STRESSES IN PMOSFETS WITH PE-SIN CAPPING

机译：DC和AC NBTI用PE-SIN封盖的PMOSFET胁迫
- 作者：Chia-Yu Lu;Horng-Chih Lin;Yi-Feng Chang;Tiao-Yuan Huang
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
94.ANALOG DEVICE AND CIRCUIT PERFORMANCE DEGRADATION UNDER SUBSTRATE BIAS ENHANCED HOT CARRIER STRESS

机译：基板偏置下的模拟装置和电路性能劣化增强了热载波应力
- 作者：K. Narasimhulu;V. Ramgopal Rao
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
95.Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate FET, TiN Metal Gate, and HfSiON High-k Gate Dielectric

机译：沿CMOS缩放路线图的栅极介电完整性，包括多栅极FET，锡金属栅极和HFSION高k栅极电介质
- 作者：T. Pompl;H. C. Mogul;M. Kerber;G. Haase;E. Ogawa;J. W. McPherson;W. Xiong;T. Schulz;K. Schrufer;R. Cleavelin
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
96.A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development

机译：Low-K Sicoh TDDB现象的全面研究及其可靠性寿命模型开发
- 作者：F. Chen;O. Bravo;K. Chanda;P. McLaughlin;T. Sullivan;J. Gill;J. Lloyd;R. Kontra;J. Aitken
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- Time-dependent dielectric breakdown;
- Cu interconnect;
- Reliability;
- Metal diffusion;
- Electrochemical reaction;
- Low-k;
- ILD;
- Process integration;
97.STABLE AND RELIABLE Q-FACTOR IN RESONANT MEMS WITH GETTER FILM

机译：带有吸气剂膜的谐振MEMS稳定可靠的Q系数
- 作者：G. Longoni;A. Conte;M. Moraja;A. Fourrier
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
98.ANALYSIS OF THERMAL VARIATION OF DRAM RETENTION TIME

机译：DRAM保留时间的热变化分析
- 作者：M. H. Cho;Y. I. Kim;D. S. Woo;S. W. Kim;M. S. Shim;Y. J. Park;W. S. Lee;B. I. Ryu
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
- DRAM;
- Retention time;
- Thermal variation;
- Thennal stress;
- GIDL;
99.Realistic Projections of Product Fails from NBTI and TDDB

机译：产品的现实投影从NBTI和TDDB失败
- 作者：A. Haggag;M. Moosa;N. Liu;D. Burnett;G. Abeln;M. Kuffler;K. Forbes;P. Schani;M. Shroff;M. Hall;C. Paquette;G. Anderson;D. Pan;K. Cox;J. Higman;M. Mendicino;S. Venkatesan
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年
100.Effects of Nano-scale Schottky Barrier of Conductor-like Breakdown Path on Progressive Breakdown in MOSFET

机译：纳米尺度肖特基屏障对导体样静脉屏障的影响在MOSFET中进行渐进式故障
- 作者：V. L. Lo;K. L. Pey;C. H. Tung;D. S. Ang
- 会议名称：《IEEE International Reliability Physics Symposium》 | 2006年