首页> 外国专利> Non-volatile memory device, erasing method of a nonvolatile memory device, a method of operating a nonvolatile memory device, a memory system including a nonvolatile memory device, a method of operating a memory system, a memory card including a nonvolatile memory device, and solid-state drive

Non-volatile memory device, erasing method of a nonvolatile memory device, a method of operating a nonvolatile memory device, a memory system including a nonvolatile memory device, a method of operating a memory system, a memory card including a nonvolatile memory device, and solid-state drive

机译:非易失性存储设备,非易失性存储设备的擦除方法,操作非易失性存储设备的方法,包括非易失性存储设备的存储系统,操作该存储系统的方法,包括非易失性存储设备的存储卡以及固态硬盘

摘要

An erase system and method of a nonvolatile memory device includes supplying an erase voltage to a plurality of memory cells of a nonvolatile memory, performing a read operation with a read voltage to word lines of the plurality of memory cells, and performing an erase verification operation with an erase verification voltage to at least one of the word lines of the plurality of memory cells, the erase verification voltage lower than the read voltage.
机译:非易失性存储器件的擦除系统和方法,包括:向非易失性存储器的多个存储单元提供擦除电压;利用对多个存储单元的字线的读取电压执行读取操作;以及执行擦除验证操作利用对多个存储单元的至少一条字线的擦除验证电压,该擦除验证电压低于读取电压。

著录项

  • 公开/公告号JP6083969B2

    专利类型

  • 公开/公告日2017-02-22

    原文格式PDF

  • 申请/专利权人 三星電子株式会社;

    申请/专利号JP20120151230

  • 发明设计人 南 ▲尚▼完;

    申请日2012-07-05

  • 分类号G11C16/02;G11C16/04;G11C16/06;

  • 国家 JP

  • 入库时间 2022-08-21 13:57:16

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