Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

摘要

A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 10⁵, a long retention time greater than 3 × 10⁴ s, and a high endurance of over 10⁵ programming cycles while maintaining an ION/IOFF ratio higher than 10².