Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor

摘要

Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies E_a = 140 meV, E_b= 188 meV and E_c = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 × 10~(-4)) at room temperature in addition to superior transistor characteristics. The device performance compares favorably to the similar single channel devices. The results show that the devices may have good potential for applications in low phase noise high frequency electronic systems.