GaN/AlGaN/GaN DISPERSION-FREE HIGH ELECTRON MOBILITY TRANSISTORS

摘要

A dispersion-free high electron mobility transistor (HEMT), comprised of a substrate; a semi-insulating buffer layer, comprised of gallium nitride (GaN) or aluminum gallium nitride (A1GaN), deposited on the substrate, an A1GaN barrier layer, with an aluminum (Al) mole fraction larger than that of the semi-insulating buffer layer, deposited on the semi-insulating buffer layer, an n-type doped graded A1GaN layer deposited on the A1GaN barrier layer, wherein an Al mole fraction is decreased from a bottom of the n-type doped graded A1GaN layer to a top of the n-type doped graded A1GaN layer, and a cap layer, comprised of GaN or A1GaN with an Al mole fraction smaller than that of the A1GaN barrier layer, deposited on the n-type doped graded A1GaN layer.