Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy

摘要

A set of different short term stress conditions are applied to AlGaN/GaN high electron mobility transistors and changes in the electronic behaviour of the gate stack and channel region are investigated by simultaneous gate and drain current low frequency noise measurements. Permanent degradation of gate current noise is observed during high gate reverse bias stress which is linked to defect creation in the gate edges. In the channel region a permanent degradation of drain noise is observed after a relatively high drain voltage stress in the ON-state. This is attributed to an increase in the trap density at the AlCaN/ CaN interface under the gated part of the channel. It was found that self-heating alone does not cause any permanent degradation to the channel or gate stack. OFF-state stress also does not affect the gate stack or the channel.