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Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor

机译：双通道AlGaN / GaN高电子迁移率晶体管中的产生复合噪声

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Department of Electronic and Information Engineering

机译：电子信息工程系

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Jha SK; Surya C; Chen KJ; Lau KM;
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年度 2006
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正文语种 eng
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1. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers [J] . Hodges C., Killat N., Kaun S. W., Applied Physics Letters . 2012,第11期

机译：光学研究AlGaN / GaN高电子迁移率晶体管中的降解机理：非辐射复合中心的产生
2. Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy [J] . Hemant Rao, Gijs Bosman Microelectronics & Reliability . 2010,第9a11期

机译：高栅极和沟道电场下AlGaN / GaN高电子迁移率晶体管的低频噪声光谱研究。
3. Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects [J] . Pinchbeck Joseph, Lee Kean Boon, Jiang Sheng, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2021,第10期

机译：双金属浇口AlGaN / GaN高电子迁移率，具有改善的跨导和减少的短信效应
4. Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor [C] . S. K. Jha, C. Surya, K. J. Chen, Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC 2006) . 2006

机译：双通道AlGaN / GaN高电子迁移率晶体管中的产生复合噪声
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? [O] . Ling-Feng Mao, Huan-Sheng Ning, Jin-Yan Wang -1

机译：AlGaN / GaN高电子迁移率晶体管中的电流崩塌是否可能源于沟道电子的能量弛豫？
7. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers [O] . Hodges C, Killat N, Kaun S W, 2012

机译：光学研究AlGaN / GaN高电子迁移率晶体管中的降解机理：非辐射复合中心的产生
8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor

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