Embodiments disclosed in the present invention generally relate to processing of substrates and, more specifically, to methods for forming a dielectric film. The methods in an embodiment comprise the following steps: arranging multiple substrates inside a processing chamber; performing a sequence of steps for expositing substrates to a first reactive gas including silicon and then, exposing substrates to plasma of a second reactive gas including at least one among oxygen or carbon and nitrogen; and repeating the sequence for forming a dielectric film including silicon carbon nitride or silicon carbon acid nitride on each substrate.
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