Halogen doping source for doping oxide thin film with halogen using atomic layer deposition method for manufacturing the halogen doping source method for doping oxide thin film with halogen using atomic layer deposition and oxide thin film doped with halogen manufactured by using the method for doping oxide thin film with halogen

摘要

The present invention relates to a halogen doping source capable of doping an oxide thin film by atomic layer deposition and a method of manufacturing the halogen doping source. The present invention also relates to a method of doping a part of an oxide thin film with a halogen by an atomic layer deposition method using the halogen element source, and a halogen-doped oxide thin film formed using the method. A halogen doping source capable of doping an oxide thin film by atomic layer deposition according to the present invention is a solution in which a hydrogen halide is diluted with water. Also, a method of doping a portion of an oxide thin film with halogen by atomic layer deposition according to the present invention includes: providing a hydrogen halide diluted to 48 to 51%; Adding the diluted hydrogen halide to Di (DI) water to form a dilute solution; Disposing a substrate on which an oxide thin film is formed in an atomic layer deposition chamber; And injecting the diluting solution into the chamber to replace part of the oxide thin film with halogen by atomic layer deposition.