HALOGEN DOPING SOURCE FOR DOPING PART OF OXIDE THIN FILM WITH HALOGEN ELEMENT USING ATOMIC LAYER DEPOSITION, METHOD FOR MANUFACTURING HALOGEN DOPING SOURCE, METHOD FOR DOPING PART OF OXIDE THIN FILM WITH HALOGEN ELEMENT SOURCE USING ATOMIC LAYER DEPOSITION, AND OXIDE THIN FILM DOPED WITH HALOGEN MANUFACTURED BY USING METHOD FOR DOPING OXIDE THIN FILM WITH HALOGEN

摘要

The present invention relates to a halogen doping source, capable of doping an oxide thin film using atomic layer deposition, and a method for manufacturing a halogen doping source. The present invention also relates to a method for doping a part of an oxide thin film with a halogen element source using atomic layer deposition and an oxide thin film doped with halogen manufactured by using the method. The halogen doping source capable of doping the oxide thin film using the atomic layer deposition is a solution in which hydrogen halide is diluted with water. Moreover, according to the present invention, the method for doping a part of an oxide thin film with a halogen element source using atomic layer deposition includes: a step of providing the hydrogen halide diluted at 48-51%; a step of forming a diluted solution by adding the diluted hydrogen halide to DI water; a step of arranging a substrate having the oxide thin film in a chamber for the atomic layer deposition; and a step of substituting a part of the oxide thin film with halogen using the atomic layer deposition by injecting the diluted solution into the chamber.;COPYRIGHT KIPO 2016