HALOGEN DOPING SOURCE CAPABLE OF PARTLY DOPING OXIDE THIN FILM WITH HALOGEN ELEMENT USING ATOMIC LAYER DEPOSITION METHOD, METHOD FOR MANUFACTURING HALOGEN DOPING SOURCE, METHOD FOR PARTLY DOPING OXIDE THIN FILM USING HALOGEN DOPING SOURCE WITH ATOMIC LAYER DEPOSITION METHOD, AND OXIDE THIN FILM WHEREON HALOGEN ELEMENT FORMED BY METHOD IS DOPED

摘要

The present invention relates to a halogen doping source capable of partly doping an oxide thin film with a halogen element using an atomic layer deposition method and a method for manufacturing the halogen doping source. In addition, the present invention relates to a method for partly doping the oxide thin film using the halogen doping source with the atomic layer deposition method and the oxide thin film whereon the halogen element formed by the method is doped. The halogen doping source capable of doping the oxide thin film using the atomic layer deposition method according to the present invention is a solution that hydrogen halide is diluted with water. In addition, the method for partly doping the oxide thin film using the halogen doping source with the atomic layer deposition method according to the present invention includes: a step of preparing the hydrogen halide diluted with water at a rate of 48-51%; a step of producing the solution by adding the diluted hydrogen halide to deionized (DI) water; a step of arranging a board on which the oxide thin film is formed inside a chamber for automatic deposition; a step of substituting a part of the oxide thin film with halogen using the atomic layer deposition method by injecting the diluted solution inside the chamber.;COPYRIGHT KIPO 2015