HALOGEN DOPING SOURCE CAPABLE OF DOPING PART OF OXIDE THIN FILM WITH HALOGEN IN ATOMIC LAYER DEPOSITION METHOD, METHOD OF PRODUCING THE HALOGEN DOPING SOURCE, METHOD OF DOPING PART OF OXIDE THIN FILM WITH HALOGEN IN ATOMIC LAYER DEPOSITION METHOD BY USING THE HALOGEN SOURCE, AND HALOGEN-DOPED OXIDE THIN FILM FORMED USING THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a halogen doping source capable of doping a part of an oxide thin film with halogen in an atomic layer deposition method, to provide a method of producing the halogen doping source, and to provide a halogen-doped oxide thin film.SOLUTION: A halogen doping source is a solution prepared by diluting hydrogen halide with water. There is provided a method of doping a part of an oxide thin film with halogen in an atomic layer deposition method including the stages of: providing the hydrogen halide diluted to 48 to 51%; preparing a diluted solution by adding the diluted hydrogen halide to deionized water; arranging a substrate formed with an oxide thin film, in a chamber for atomic layer deposition; and substituting halogen for a part of the oxide thin film in the atomic layer deposition method by jetting the diluted solution into the chamber.