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Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

机译：纳米尺度AlGaN / GaN高电子迁移率晶体管上缺陷形成的应变和温度依赖性

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Chung-han Lin; Student Member; Tyler A. Merz; Daniel R. Doutt; Jungwoo Joh; Jesús A. Del Alamo; Umesh K. Mishra; Leonard J. Brillson;
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1. Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale [J] . Lin C.-H., Merz T. A., Doutt D. R., Electron Devices, IEEE Transactions on . 2012,第10期

机译：纳米尺度AlGaN / GaN高电子迁移率晶体管上缺陷形成的应变和温度依赖性
2. Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors [J] . Takei Yusuke, Tsutsui Kazuo, Saito Wataru, Japanese journal of applied physics . 2016,第4期

机译：欧姆接触特性对AlGaN / GaN高电子迁移率晶体管的AlGaN层厚度的依赖性
3. Nanometer-Scale Strain Measurements in AlGaN/GaN High-Electron Mobility Transistors During Pulsed Operation [J] . Matthew R. Rosenberger, Jason P. Jones, Eric R. Heller, IEEE Transactions on Electron Devices . 2016,第7期

机译：脉冲操作期间AlGaN / GaN高电子迁移率晶体管的纳米级应变测量
4. Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping [C] . E. Pichonat, J. Kuzmik, S. Bychikhin, European Microwave Integrated Circuits Conference . 2006

机译：使用微拉曼散射光谱和瞬态干涉测绘的AlGaN / GaN高电子迁移率晶体管的温度分析
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [O] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, 2016

机译：AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
7. Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor [O] . Tamura, Takahiro, Kotani, Junji, Kasai, Seiya, 2008

机译：多台面沟道AlGaN / GaN高电子迁移率晶体管中几乎与温度无关的饱和漏极电流

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

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