Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping

摘要

We report on the measurement of the temperature, i.e. self-heating effects, in active AlGaN/GaN HEMTs grown on sapphire substrate. Micro-Raman spectroscopy is used to measure temperature with 1μm spatial resolution and 10°C temperature accuracy under the DC conditions. Transient interferometric method combined with a thermal simulation is used for analysis in the transient state. The results match well the results obtained by an electrical method performed both in DC and transient mode. The thermal resistance of 210 K/W (280 K/W) has been determined for 8 (2) finger device.