The AlGaN/GaN high high election mobility transistor and its production mannered null nitriding gallium which possess the gate contact on the GaN

摘要

And a method for fabricating a HEMT with high electron mobility transistor (HEMT). Gallium nitride (GaN) channel layer, a device according to an embodiment of the present invention comprises (AlGaN) barrier layer of aluminum gallium nitride on the channel layer. The form (18) source electrode by providing an ohmic contact to the first, to provide an ohmic contact of the second spaced apart from (18) the source electrode barrier layer (16) on the barrier layer (16) on I form a drain electrode (20) by. Barrier layer (16) on, I provided cap segment of the GaN-based (30) between the source electrode (18) and the drain electrode (20). Cap segment of the GaN-based (30), having first side wall (31) and spaced from the source electrode (18) next to the source electrode (18), next to the drain electrode (20) and the drain electrode ( and may have the second side wall (32) and spaced from 20). To form (22) gate contact by providing a non-ohmic contact cap segment of GaN-based (30) on. Gate contact (22) has a first side wall arranged in a substantially straight line (31) first side wall (30) segments of the GaN cap base (27). Gate contact (22), extends only to a portion between the second side wall (31) first side wall (30) segments of GaN cap base (32).