GaN A STRUCTURE FOR A GALLIUM NITRIDE GaN HIGH ELECTRON MOBILITY TRANSISTOR

摘要

A high electron mobility transistor (HEMT) device utilizing a gate protection layer is provided. The substrate has a channel layer arranged on the substrate, and has a barrier layer arranged on the channel layer. The channel layer and the barrier layer define a heterojunction, and the gate structure is arranged over the gate region of the barrier layer. The gate structure includes a gate arranged on the cap, wherein the cap is disposed on the barrier layer. The gate protection layer is arranged along the sidewalls of the cap and is arranged below the gate between the opposing surfaces of the gate and the cap. Preferably, the gate passivation layer passivates the gate, reduces leakage current along the sidewalls of the cap, and improves device reliability and threshold voltage uniformity. A method for manufacturing a HEMT device is also provided.;