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Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

机译：AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积

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Huan-Yu Shih; Fu-Chuan Chu; Atanu Das; Chia-Yu Lee; Ming-Jang Chen; Ray-Ming Lin;
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1. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [J] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, Nanoscale Research Letters . 2016,第1期

机译：AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
2. Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides [J] . Po-Chun Yeh, Yun-Wei Lin, Yue-Lin Huang, Applied physics express . 2015,第8期

机译：在具有光增强化学和等离子体增强原子层沉积氧化物的倒梯形三栅极AlGaN / GaN MOS高电子迁移率晶体管中，由栅极面积和栅极凹槽控制的阈值电压
3. Characterization of interface states in AlGaN/GaN metal-oxide- semiconductor heterostructure field-effect transistors with HfO_2 gate dielectric grown by atomic layer deposition [J] . R. Stoklas, D. Gregušová, S. Hasenöhrl, Applied Surface Science . 2018,第DECa15期

机译：具有通过原子层沉积生长的HfO_2栅介质的AlGaN / GaN金属氧化物半导体异质结构场效应晶体管中界面态的表征
4. Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer [C] . Lee Bongmook, Choi Young-Hwan, Kirkpatrick Casey, 2011 International Semiconductor Device Research Symposium . 2011

机译：高k HfAlO栅极介电层的原子层沉积（ALD）功能增强了AlGaN / GaN金属氧化物半导体异质结场效应晶体管（MOSHFET）的性能
5. Gate dielectric investigations of ultra-thin oxide and nitride /oxide stack for nanometer N- and P -channel metal-oxide-semiconductor field-effect-transistors [D] . Yee, Kam Fu 2000

机译：纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [O] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, 2016

机译：AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
7. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating [O] . Xinke Liu, Youming Lu, Wenjie Yu, 2015

机译：AlGaN / GaN金属氧化物半导体高电子迁移率晶体管，具有偏振P（VDF-TRFE）铁电聚合物门控

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

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