Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated Using Self-Aligned Silicide Technology

摘要

N- and p-channel metal-oxide-semiconductor field-effect transistors have been fabricated with self-aligned tungsten silicide source, tungsten silicide drain, and tungsten silicide/polycrystalline-silicon gate. Ion beam mixing and rapid thermal annealing techniques were employed to form smooth tungsten silicide films selectively on the device area and to simultaneously form shallow source and drain p-n junctions. Good electrical characteristics were obtained for both n- and p-channel devices, which have a gate length of 1.5 micrometers.