Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer

摘要

In this study, a novel metal-semiconductor gate enhancement-mode (E-mode) and a metal-insulator-metal-semiconductor (MIMS) gate depletion-mode (D-mode) AlGaAs/InCaAs pseudomorphic high electron mobility transistor (pHEMT) on a single GaAs substrate have been developed by using high dielectric constant praseodymium insulator layer. The epitaxial layers were design for an enhancement-mode pHEMT after gate recess process. To achieve E/D-mode pHEMTs on single GaAs wafer, traditional Pt/Ti/Au metals were deposited as Schottky contact for E-mode pHEMTs and Pr/Pr_2O_3/Ti/Au were deposited as MIMS-gate for D-mode pHEMTs. This AlGaAs/lnGaAs E-mode pHEMTs exhibit a gate turn-on voltage (Von) of +1 V and a gate-to-drain breakdown voltage of -5.6 V, and these values were +7 V and -34 V for MIMS-gate D-mode pHEMTs, respectively. Therefore, this high-k insulator in D-mode pHEMT is beneficial for suppressing the gate leakage current. Comparing to previous E/D-mode pHEMT technology, this E-mode pHEMTs and MIMS-gate D-mode pHEMTs exhibit a highly potential for high uniformity GaAs logic circuit applications due to its single recess process.