ENHANCEMENT AND DEPLETION-MODE PHEMT DEVICE HAVING TWO InGaP ETCH-STOP LAYERS AND METHOD OF FORMING SAME

摘要

depletion / enhancement PHEMT ((pseudomorphic high electron mobility transistor, pseudomorphic high electron mobility transistor) device structure is presented the structure of (a) a semiconductor substrate;. (b) a buffer region comprising one or more semiconductor buffer layer on the substrate; (c) - above, the buffer area semiconductor channel layer; (d) Above the channel layer of the electron donor layer, in (f) the gallium arsenide or aluminum gallium arsenide, the first schottky layer over the first InGaP; (e) the electron donor layer over an aluminum gallium arsenide or gallium arsenide first schottky layer layer; (g) the first InGaP layer over the gallium arsenide or aluminum gallium arsenide, the second schottky layer; (h) a GaAs or aluminum gallium arsenide of the second schottky layer above the second InGaP layer, ( i) the second InGaP layer above the doped GaAs contact layer; (j) is extending from the top surface of the group the contact layer at least to the buffer area, isolation structure defining a first active region and a second active region ; extending out from the top surface of the (l) the doped GaAs contact layer, wherein; (k) increase-resistance source contact disposed on the doped GaAs contact layer and an enhancement ohmic drain contact in the first active region enhancement gate through the first InGaP layer in a first active area recess (recess); (m) a GaAs or aluminum gallium arsenide disposed over the first schottky layer within the enhancement gate recess the increase gate contact; extending out from the top surface of the (o) a doped GaAs contact layer; (n) the second active depletion disposed on the doped GaAs contact layer in the region ohmic source contact and a depletion ohmic drain contact and the second passing through the second InGaP layer in the active region a depletion gate recess; and (p) arranged on the ball or aluminum gallium arsenide GaAs of the second schottky layer within the depletion gate recess It characterized in that it includes a gate contact piphyeong.