A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology

摘要

A modified Angelov model for InGaP/InGaAs enhancement-mode (E-mode) and depletion-mode (D-mode) pHEMTs is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the Angelov model, by modifying the formula to have comprehensive bias-dependent descriptions for nonlinear behaviors of the devices. The measured and model-predicted device DC Ⅰ-Ⅴ curves, S-parameters, and power performance have been compared. Good correspondences between measurement and simulation power performance up to the third-order inter-modulation product are demonstrated for E-mode and D-mode pHEMTs simultaneously, which confirm the validity of this model.