Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

We demonstrate that electron holography can be used to map the electrostatic potential in source-drain extensions (SDEs) of 30-nm-gate-length metal-oxide-semiconductor field-effect transistors (MOSFETs). To reduce specimen-preparation artifacts, which hav