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POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE WITH THREE-DIMENSIONAL SUPER JUNCTION AND FABRICATION METHOD THEREOF
POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE WITH THREE-DIMENSIONAL SUPER JUNCTION AND FABRICATION METHOD THEREOF
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机译:三维超结的功率金属氧化物-半金属半导体场效应晶体管器件及其制造方法
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摘要
A power metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a first metal layer, a substrate, an epitaxy layer, a plurality of first trench wells, a plurality of second trench wells, a plurality of body structure layers, a plurality of polysilicon layers, and a second metal layer. A part of a depletion region is formed between each first trench well and the epitaxy layer and between a body structure layer corresponding to the each first trench well and the epitaxy layer, and a rest part of the depletion region is formed between a second trench well corresponding to the each first trench well and the epitaxy layer. The plurality of second trench wells increase a breakdown voltage of the power MOSFET device and reduce a conduction resistor of the power MOSFET device.
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