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Power metal-oxide-semiconductor field-effect transistor device with three-dimensional super junction and fabrication method thereof
Power metal-oxide-semiconductor field-effect transistor device with three-dimensional super junction and fabrication method thereof
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机译:具有三维超结的功率金属氧化物半导体场效应晶体管器件及其制造方法
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摘要
A power metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a first metal layer, a substrate, an epitaxy layer, a plurality of first trench wells, a plurality of second trench wells, a plurality of body structure layers, a plurality of polysilicon layers, and a second metal layer. A part of a depletion region is formed between each first trench well and the epitaxy layer and between a body structure layer corresponding to the each first trench well and the epitaxy layer, and a rest part of the depletion region is formed between a second trench well corresponding to the each first trench well and the epitaxy layer. The plurality of second trench wells increase a breakdown voltage of the power MOSFET device and reduce a conduction resistor of the power MOSFET device.
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