Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into thenanometer regime, quantum mechanical effects are becoming more and more significant.In this work, a model for thesurrounding-gate (SG) nMOSFET is developed.The Schrdinger equation is solved analytically.Some of the solutionsare verified via results obtained from simulations.It is found that the percentage of the electrons with lighter conductivitymass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases.Thecentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carrierswill suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.