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Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter

机译:基于金属氧化物半导体场效应晶体管的库尔特计数器的实验表征

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摘要

We report the detailed characterization of an ultrasensitive microfluidic device used to detect the translocation of small particles through a sensing microchannel. The device connects a fluidic circuit to the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET) and detects particles by monitoring the MOSFET drain current modulation instead of the modulation in the ionic current through the sensing channel. The minimum volume ratio of the particle to the sensing channel detected is 0.006%, which is about ten times smaller than the lowest detected volume ratio previously reported in the literature. This volume ratio is detected at a noise level of about 0.6% of the baseline MOSFET drain current, clearly showing the amplification effects from the fluidic circuits and the MOSFETs. We characterize the device sensitivity as a function of the MOSFET gate potential and show that its sensitivity is higher when the MOSFET is operating below its threshold gate voltage than when it is operating above the threshold voltage. In addition, we demonstrate that the device sensitivity linearly increases with the applied electrical bias across the fluidic circuit. Finally, we show that polystyrene beads and glass beads with similar sizes can be distinguished from each other based on their different translocation times, and the size distribution of microbeads can be obtained with accuracy comparable to that of direct scanning electron microscopy measurements.
机译:我们报告了用于检测通过感测微通道的小颗粒的超敏感微流控设备的详细的表征。该设备将流体电路连接到金属氧化物半导体场效应晶体管(MOSFET)的栅极,并通过监视MOSFET漏极电流调制而不是通过感测通道的离子电流调制来检测颗粒。颗粒与检测通道的最小体积比为0.006%,比先前文献中报道的最低检测体积比小约十倍。在基准MOSFET漏极电流的约0.6%的噪声水平下检测到该体积比,清楚地显示了来自流体电路和MOSFET的放大效应。我们将器件灵敏度表征为MOSFET栅极电势的函数,并表明,当MOSFET在其阈值栅极电压以下工作时,其灵敏度高于在阈值电压之上运行时的灵敏度。此外,我们证明了设备灵敏度随着流体回路中施加的电偏压线性增加。最后,我们表明,具有相似尺寸的聚苯乙烯珠和玻璃珠可以根据其不同的易位时间而彼此区分开,并且可以获得与直接扫描电子显微镜测量结果相当的精度的微珠尺寸分布。

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