机译:双栅极无结p沟道p型金属氧化物半导体场效应晶体管的实验和分析表征
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan,JST-CREST, Bunkyo, Tokyo 113-8656, Japan,College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan,JST-CREST, Bunkyo, Tokyo 113-8656, Japan;
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan,JST-CREST, Bunkyo, Tokyo 113-8656, Japan;
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan,JST-CREST, Bunkyo, Tokyo 113-8656, Japan;
College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan,JST-CREST, Bunkyo, Tokyo 113-8656, Japan;
机译:绝缘体上超薄无结锗p沟道金属氧化物半导体场效应晶体管中的空穴迁移率
机译:孔移动性在超薄车身连接锗的绝缘体P沟道金属氧化物半导体场效应晶体管
机译:用于无注入锗p沟道金属氧化物半导体场效应晶体管的锗化镍肖特基源极/漏极触点的低温制备和表征
机译:自对准金属双栅极无结p沟道低温多晶锗薄膜晶体管,玻璃衬底上有薄锗通道
机译:先进的锗 - 锡P沟道金属氧化物半导体场效应晶体管
机译:基于金属氧化物半导体场效应晶体管的库尔特计数器的实验表征
机译:具有有效空穴迁移率的应变锗锡(GeSn)P沟道金属氧化物半导体场效应晶体管